Method for reducing junction capacitance using a halo implant photomask

摘要

A method for forming a semiconductor device is provided. The method includes providing a substrate having a gate formed thereon. A first doped region is formed in the substrate. The first doped region extends a first distance from the gate. A second doped region is formed in the substrate. The second doped region extends a second distance from the gate. The first distance is less than the second distance. A semiconductor device includes a substrate, isolation structures defined in the substrate, and a gate disposed on the substrate between adjacent isolation structures. A first doped region is defined in the substrate proximate the gate. The first doped region extends a first distance from the gate. A second doped region is defined in the substrate proximate the gate. The second doped region extends a second distance from the gate. The first distance is less than the first distance.