发明名称 Low-impedance high-density deposited-on-laminate structures having reduced stress
摘要 Low-impedance high density deposited-on-laminate (DONL) structures having reduced stress features reducing metallization present on the laminate printed circuit board. In this manner, reduced is the force per unit area exerted on the dielectric material disposed adjacent to the laminate material that is typically present during thermal cycling of the structure.
申请公布号 US6323435(B1) 申请公布日期 2001.11.27
申请号 US19990363959 申请日期 1999.07.29
申请人 KULICKE & SOFFA HOLDINGS, INC. 发明人 STRANDBERG JAN I.;CHAZAN DAVID J.;SKINNER MICHAEL P.
分类号 H05K3/28;H01L21/48;H01L23/538;H05K1/02;H05K1/11;H05K3/00;H05K3/46;(IPC1-7):H05K1/03;H05K1/16 主分类号 H05K3/28
代理机构 代理人
主权项
地址