发明名称 |
Semiconductor device having a vertical active region and method of manufacture thereof |
摘要 |
A semiconductor device and method of manufacture thereof is provided. According to one embodiment, a semiconductor device is formed by forming a trench within a substrate. An oxide layer is formed within the trench and portions of the oxide layer are removed to expose one or more portions of the substrate within the trench. A plurality of doped polysilicon pillars are formed within the trench. The doped polysilicon pillars include one or more active region pillars formed on the one or more exposed portions of the substrate.
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申请公布号 |
US6323524(B1) |
申请公布日期 |
2001.11.27 |
申请号 |
US19980143480 |
申请日期 |
1998.08.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MAY CHARLES E.;DAWSON ROBERT |
分类号 |
H01L21/336;H01L29/417;H01L29/423;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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