| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a combinatorial thin film deposition method by which device structure can be optimized with high efficiency and also to provide a combinatorial plasma-enhanced CVD system using this method. SOLUTION: In depositing thin film by depositing a material on the surface of a substrate, a fixed mask 5 is brought into close contact with a substrate 2 to be subjected to film deposition to set up a plurality of film-deposition regions and a movable mask is moved with respect to the fixed mask 5, and thin film deposition is carried out while changing film composition and reaction condition with respect to every film-deposition region selected by the movable mask 6. The movable mask 6 is moved linearly and the fixed mask 5 is rotated, by which the moving direction of the movable mask 6 with respect to the fixed mask 5 can be altered. The fixed mask 5 has a plurality of openings which are matrix-arranged into square shape, rectangular shape, circular shape, etc., and the movable mask 6 is successively moved along the column or row of the openings.</p> |
