| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for plasma ion implantation which avoids a phenomenon in that the fall of the voltage of the high voltage pulse applied to a base material is damped by the load impedance of the base material, and in which generation of damages such as sputtering on the base material is prevented, the plasma ion is correctly implanted, and the diversified kinds of plasma are applied to. SOLUTION: The negative or positive high voltage pulse is applied to the base material as a load, a discharge switching circuit 2 is formed on a bias power source for forming an ion sheath around the base material, and the charges left on the base material side in every application of the high voltage pulse is discharged to the ground at every completion of the application of the high voltage pulse by the discharge switching circuit.
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