发明名称 |
Method of fabricating semiconductor device |
摘要 |
Disclosed is a method of fabricating a semiconductor device in which at least an LDD type insulated-gate field effect transistor and a bipolar transistor are formed on a common base substrate. An insulating layer for forming side walls of an LDD type insulated-gate field effect transistor is formed by a stack of first and second insulating films. An opening is formed in the lower first insulating film at a position in a bipolar transistor forming area, and a single crystal semiconductor layer is formed on a base substrate through the opening. With this configuration, the fabrication steps can be simplified and the reliability of the semiconductor device can be enhanced.
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申请公布号 |
US6323075(B1) |
申请公布日期 |
2001.11.27 |
申请号 |
US20000583279 |
申请日期 |
2000.05.31 |
申请人 |
SONY CORPORATION |
发明人 |
AMMO HIROAKI;MIWA HIROYUKI |
分类号 |
H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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