发明名称 REDUCED LEAKAGE ANTIFUSE STRUCTURE AND FABRICATION METHOD
摘要 <p>An antifuse comprises an antifuse material disposed between a lower conductive electrode and an upper conductive electrode. The antifuse material comprises a layer of amorphous silicon disposed between two layers of silicon nitride. A thin layer of silicon dioxide is disposed between the layer of amorphous silicon and one of the silicon nitride layers.</p>
申请公布号 EP0774163(B1) 申请公布日期 2001.11.21
申请号 EP19960918237 申请日期 1996.06.05
申请人 ACTEL CORPORATION 发明人 MCCOLLUM, JOHN, L.;HAWLEY, FRANK, W.
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L23/525 主分类号 H01L21/82
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