发明名称 |
IMPROVED ESD DIODE STRUCTURE |
摘要 |
An ESD diode protects a circuit against electrostatic discharge (ESD). The ESD diode has four adjacent regions. The first and third regions are formed by doping a semiconductor substrate so that it has a P-type conductivity. The second and fourth regions are formed by doping the semiconductor substrate so that it has an N-type conductivity. The first region is for connection to a signal terminal of the circuit being protected when the fourth region is connected to a positive power line of the circuit. The fourth region is for connection to the signal terminal when the first region is connected to the ground line or a negative power line of the circuit. |
申请公布号 |
EP1155456(A1) |
申请公布日期 |
2001.11.21 |
申请号 |
EP20000981343 |
申请日期 |
2000.12.05 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
COLCLASER, ROY, A.;SZMYD, DAVID, M. |
分类号 |
H01L29/74;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/861;(IPC1-7):H01L27/02 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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