发明名称 IMPROVED ESD DIODE STRUCTURE
摘要 An ESD diode protects a circuit against electrostatic discharge (ESD). The ESD diode has four adjacent regions. The first and third regions are formed by doping a semiconductor substrate so that it has a P-type conductivity. The second and fourth regions are formed by doping the semiconductor substrate so that it has an N-type conductivity. The first region is for connection to a signal terminal of the circuit being protected when the fourth region is connected to a positive power line of the circuit. The fourth region is for connection to the signal terminal when the first region is connected to the ground line or a negative power line of the circuit.
申请公布号 EP1155456(A1) 申请公布日期 2001.11.21
申请号 EP20000981343 申请日期 2000.12.05
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 COLCLASER, ROY, A.;SZMYD, DAVID, M.
分类号 H01L29/74;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/861;(IPC1-7):H01L27/02 主分类号 H01L29/74
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