| 摘要 |
A Hall effect semiconductor magnetic field sensor has an active region 53 in which a signal responsive to a detected magnetic field is developed. The active region is at least partly in an intrinsic conduction regime when it is unbiassed and at a normal temperature (290K), but includes a junction (between layers 53 and 66) which may be biassed to reduce intrinsic conduction in the active region. This enables the sensor active region to operate in the extrinsic saturated conduction state, where the concentration of carriers is independent of temperature, thus giving the sensor a response which is independent of temperature. The sensor may be made of Indium Antimonide. |
