发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT HAVING STAND-BY CURRENT REDUCING CIRCUIT |
摘要 |
PURPOSE: A semiconductor IC(Integrated Circuit) is provided to reduce the current consumption in the stand-by state even when a CMOS circuit is shrunken and the subthreshold current increases. CONSTITUTION: A device parameter of a switching transistor is set in such a way that a leakage current of the switching transistor making up a power source switch which is turned off in a stand-by state is smaller than the sum total of subthreshold currents of P-channel or N-channel MOS transistors in an OFF state of a plurality of CMOS circuits. Therefore, the currents which flow through the plurality of CMOS circuits in the stand-by state are not determined by the subthreshold current but are determined by a small leakage current of the switching transistor.
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申请公布号 |
KR100316451(B1) |
申请公布日期 |
2001.11.21 |
申请号 |
KR19990041788 |
申请日期 |
1999.09.29 |
申请人 |
HITACHI DEVICE ENGINEERING CO., LTD.;HITACHI, LTD. |
发明人 |
KAWAHARA TAKAYUKI;KAWAJIRI YOSHIKI;AKIBA TAKESADA;HORIGUCHI MASASHI;WATANABE TAKAO;KITSUKAWA GORO;KAWASE YASUSHI;TACHIBANA TOSHIKAZU;AOKI MASAKAZU |
分类号 |
G11C5/14;G11C8/08;H03K19/00;(IPC1-7):H01L27/02 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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