发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT HAVING STAND-BY CURRENT REDUCING CIRCUIT
摘要 PURPOSE: A semiconductor IC(Integrated Circuit) is provided to reduce the current consumption in the stand-by state even when a CMOS circuit is shrunken and the subthreshold current increases. CONSTITUTION: A device parameter of a switching transistor is set in such a way that a leakage current of the switching transistor making up a power source switch which is turned off in a stand-by state is smaller than the sum total of subthreshold currents of P-channel or N-channel MOS transistors in an OFF state of a plurality of CMOS circuits. Therefore, the currents which flow through the plurality of CMOS circuits in the stand-by state are not determined by the subthreshold current but are determined by a small leakage current of the switching transistor.
申请公布号 KR100316451(B1) 申请公布日期 2001.11.21
申请号 KR19990041788 申请日期 1999.09.29
申请人 HITACHI DEVICE ENGINEERING CO., LTD.;HITACHI, LTD. 发明人 KAWAHARA TAKAYUKI;KAWAJIRI YOSHIKI;AKIBA TAKESADA;HORIGUCHI MASASHI;WATANABE TAKAO;KITSUKAWA GORO;KAWASE YASUSHI;TACHIBANA TOSHIKAZU;AOKI MASAKAZU
分类号 G11C5/14;G11C8/08;H03K19/00;(IPC1-7):H01L27/02 主分类号 G11C5/14
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