| 发明名称 |
Method of surface protection of a semiconductor wafer during polishing |
| 摘要 |
<p>The protection to the backside of the semiconductor wafer (10) is accomplished by applying a layer (32) of silicon oxide or silicon nitride or other deposited material to the back surface of a semiconductor wafer (10) to protect against particles, scratches, and etching by mild caustic solutions. The layer (32) remains in place during all three processes, edge pre-polish, mirror edge polish, and wafer polish. <IMAGE></p> |
| 申请公布号 |
EP0607940(B1) |
申请公布日期 |
2001.11.21 |
| 申请号 |
EP19940100715 |
申请日期 |
1994.01.19 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ALLEN, FRANKLIN L.;DYER LAWRENCE D.;SIMPSON VIKKI S.;CUNNINGHAM MICHAEL;DAVIS EUGENE C.;MEDDERS JERRY B.;SMITH JERRY D.;ROBBINS,JOHN B. |
| 分类号 |
B24B9/06;H01L21/304;H01L21/306;(IPC1-7):H01L21/304 |
主分类号 |
B24B9/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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