发明名称 Active matrix type semiconductor display device
摘要 <p>There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divided into two, different potentials are applied to the two counter electrodes, respectively and inversion driving is carried out each other. Since a potential of an image signal can be made low by doing so, it is possible to lower a voltage necessary for operation of a driver circuit. As a result, it is possible to realize improvement of reliability of an element such as a TFT and reduction of consumed electric power. Moreover, since it is possible to lower a voltage of a timing pulse supplied by the driver circuit, a booster circuit can be omitted, and reduction of an area of the driver circuit can be realized.</p>
申请公布号 EP1003151(A3) 申请公布日期 2001.11.21
申请号 EP19990122790 申请日期 1999.11.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA, YUKIO;NAGAO, SHOU
分类号 G09G3/32;G09G3/36;(IPC1-7):G09G3/36;G09G3/30 主分类号 G09G3/32
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