| 摘要 |
<p>The method provides a bias voltage at radio frequencies for example above 1 GHz, to a device 3 carried by a substrate having a plurality of overlapping electrically conductive layers 5, 6, 7 with dielectric material 8, 9 therebetween. The method consists of connecting a resistor 10 across a pair of the plurality of layers, maintaining one of the pair of layers at ground potential, and connecting the other layer to the device through via holes in the substrate. Thereby, a capacitor is formed in the overlapping layers. The method provides reduced parasitic inductance. The dielectric material 8, 9 may be a prepreg material. The conductive layers may be made from copper. The device 3, is preferably on FET.</p> |
