发明名称 |
Method of manufacturing a multilayered dielectric film and semiconductor device |
摘要 |
<p>The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si-O-Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually. <IMAGE> <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP1156133(A2) |
申请公布日期 |
2001.11.21 |
申请号 |
EP20010111210 |
申请日期 |
2001.05.14 |
申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
SHIOYA, YOSHIMI;OHIRA, KOUICHI;MAEDA, KAZUO;IKAKURA, HIROSHI;ISHIMARU, TOMOMI;YAMAMOTO, YOUICHI;KOTAKE, YUICHIRO |
分类号 |
H01L23/522;C23C16/30;C23C16/44;H01L21/312;H01L21/316;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):C23C16/40 |
主分类号 |
H01L23/522 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|