发明名称 |
Method of fabricating stacked N-O-N ultrathin gate dielectric structures |
摘要 |
The present invention is an improved semiconductor device and an improved method of manufacturing a semiconductor device. The present invention deposits a layer of oxynitride where gate oxidation would normally take place. Alternatively, the method according to the present invention uses a plurality of layers of dielectric material where gate oxidation would normally take place including a layer of oxynitride having a nitrogen content. The layer of oxynitride is deposited under a predetermined pressure using a stream of gas, wherein insensitivity to defects on a surface of the substrate results from the oxynitride layer.
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申请公布号 |
US6319857(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US19960714915 |
申请日期 |
1996.09.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
IBOK EFFIONG E. |
分类号 |
H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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