发明名称 Decoupling capacitor structure
摘要 A capacitor structure (10) is implemented in an integrated circuit chip (11) along with other devices at the device level in the chip structure. The capacitor structure includes an elongated device body (17) formed from a first semiconductor material. This device body (17) is bordered on both lateral sides by lateral regions (20, 22) formed from a second semiconductor material. A dielectric layer (28) overlays both lateral regions (20, 22) and the device body (17), while an anode layer (30) overlays the dielectric layer in an area defined by the device body. Each lateral region (20, 22) is coupled to ground at a first end (25) of the elongated device body (17). The anode (30) is coupled to the chip supply voltage at a second end (33) of the device body opposite to the first end. The entire structure is designed and dimensioned to form an area-efficient and high-frequency capacitor.
申请公布号 US6320237(B1) 申请公布日期 2001.11.20
申请号 US19990435872 申请日期 1999.11.08
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ASSADERAGHI FARIBORZ;CHASE HAROLD WAYNE;RUNYON STEPHEN LARRY
分类号 H01L29/94;(IPC1-7):H01L29/80 主分类号 H01L29/94
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