发明名称 INTERNAL DISCHARGE CIRCUIT USING SEMICONDUCTOR SWITCH ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an internal discharge circuit using a semiconductor switch element capable of securing safeness of an electrical treatment device by an internal discharge capability even in a case where the semiconductor switch becomes uncontrollable for some reason or other. SOLUTION: An internal discharge circuit 147 is composed of a transformer 103, its primary side area 101, its secondary side area 102, an internal discharge resistor 141 a semiconductor switch element 133, and in the secondary side area 102, a safety securing resistor 140 for automatically putting the semiconductor switch element 133 in an energized state is connected between the positive pole of an electrical energy accumulation section 142 and the gate of the semiconductor switch element 133 by accumulated electrical energy.
申请公布号 JP2001321452(A) 申请公布日期 2001.11.20
申请号 JP20000143991 申请日期 2000.05.16
申请人 NIPPON KODEN CORP 发明人 AKIYAMA NAOTO;INOMATA MASAHIKO;TSUMURA IKUHIRO
分类号 A61N1/39;H02M1/32;H03K17/00;H03K17/56;H03K17/687 主分类号 A61N1/39
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