发明名称 METHOD OF PRODUCING OXIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a new method for producing an oxide single crystal whose oxidation state is enhanced (and which is liable to be oxidized). SOLUTION: The single crystal is formed by heating a solution or a melt of a raw material of the oxide single crystal, in which at least one of silver or silver compounds has been added, and gradually cooling. It is possible to give a possibility of being oxidized to a compound generally hard to be oxidized by this method. Thereby, this method has a merit capable of being widely applied to improve the superconducting properties or to discover a new superconductor.
申请公布号 JP2001322898(A) 申请公布日期 2001.11.20
申请号 JP20000136961 申请日期 2000.05.10
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 WATANABE TAKAO;CHINASANBI SEKAARU;MATSUDA AZUSA;SHIBATA HIROYUKI
分类号 C30B29/22;C30B9/06;(IPC1-7):C30B29/22 主分类号 C30B29/22
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