发明名称 |
METHOD OF PRODUCING OXIDE SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a new method for producing an oxide single crystal whose oxidation state is enhanced (and which is liable to be oxidized). SOLUTION: The single crystal is formed by heating a solution or a melt of a raw material of the oxide single crystal, in which at least one of silver or silver compounds has been added, and gradually cooling. It is possible to give a possibility of being oxidized to a compound generally hard to be oxidized by this method. Thereby, this method has a merit capable of being widely applied to improve the superconducting properties or to discover a new superconductor.
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申请公布号 |
JP2001322898(A) |
申请公布日期 |
2001.11.20 |
申请号 |
JP20000136961 |
申请日期 |
2000.05.10 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
WATANABE TAKAO;CHINASANBI SEKAARU;MATSUDA AZUSA;SHIBATA HIROYUKI |
分类号 |
C30B29/22;C30B9/06;(IPC1-7):C30B29/22 |
主分类号 |
C30B29/22 |
代理机构 |
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地址 |
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