发明名称 |
Defect removable semiconductor devices |
摘要 |
A defect removable semiconductor element and the manufacturing method thereof are provided with a protective layer covering fuses exposed at a part of the redundancy memory cell region, the layer being thinner than the one covering the main memory cell region, so that a predetermined fuse is cut off for removing a defect without damaging adjacent fuses even if the amount of energy of laser beam to be applied is greater and the size of the spot to be focused is bigger, thereby improving operational conditions in the energy of the laser beam to be applied and the size of a spot to be focused and the operational reliability in removing a defect.
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申请公布号 |
US6320243(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US19990434623 |
申请日期 |
1999.11.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG HEE-GEUN;KIM YONG-SHIK |
分类号 |
H01L23/525;H01L27/108;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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