发明名称 Defect removable semiconductor devices
摘要 A defect removable semiconductor element and the manufacturing method thereof are provided with a protective layer covering fuses exposed at a part of the redundancy memory cell region, the layer being thinner than the one covering the main memory cell region, so that a predetermined fuse is cut off for removing a defect without damaging adjacent fuses even if the amount of energy of laser beam to be applied is greater and the size of the spot to be focused is bigger, thereby improving operational conditions in the energy of the laser beam to be applied and the size of a spot to be focused and the operational reliability in removing a defect.
申请公布号 US6320243(B1) 申请公布日期 2001.11.20
申请号 US19990434623 申请日期 1999.11.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG HEE-GEUN;KIM YONG-SHIK
分类号 H01L23/525;H01L27/108;(IPC1-7):H01L29/00 主分类号 H01L23/525
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