发明名称 |
Semiconductor memory device allowing reduction in current consumption |
摘要 |
A through-current Ic of a comparator circuit is switched in accordance with a response speed required with respect to a current consumption. Additionally, a through-current Is of a shifter circuit, which sends to the comparator circuit an output signal at an appropriate level transmitting a difference between an internal power supply potential Vdd and a reference potential Vref is switched according to the required response speed. When a device is in a standby state requiring a small current consumption in internal power supply potential Vdd, both through-currents Ic and Is are set small so that the whole current consumption can be further reduced.
|
申请公布号 |
US6320810(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US20000659832 |
申请日期 |
2000.09.11 |
申请人 |
MITSUBISHIKI DENKI KABUSHIKI KAISHA |
发明人 |
KONO TAKASHI;MITSUI KATSUYOSHI;VOO THART FAH;SUTARDJA SEHAT |
分类号 |
G11C11/407;G05F3/24;G11C5/14;G11C7/22;G11C11/4074;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/407 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|