发明名称 Semiconductor memory device allowing reduction in current consumption
摘要 A through-current Ic of a comparator circuit is switched in accordance with a response speed required with respect to a current consumption. Additionally, a through-current Is of a shifter circuit, which sends to the comparator circuit an output signal at an appropriate level transmitting a difference between an internal power supply potential Vdd and a reference potential Vref is switched according to the required response speed. When a device is in a standby state requiring a small current consumption in internal power supply potential Vdd, both through-currents Ic and Is are set small so that the whole current consumption can be further reduced.
申请公布号 US6320810(B1) 申请公布日期 2001.11.20
申请号 US20000659832 申请日期 2000.09.11
申请人 MITSUBISHIKI DENKI KABUSHIKI KAISHA 发明人 KONO TAKASHI;MITSUI KATSUYOSHI;VOO THART FAH;SUTARDJA SEHAT
分类号 G11C11/407;G05F3/24;G11C5/14;G11C7/22;G11C11/4074;(IPC1-7):G11C7/00 主分类号 G11C11/407
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