发明名称 Semiconductor device characteristic simulation apparatus and its method
摘要 In a semiconductor device characteristic simulation apparatus and its method, performance characteristics of a semiconductor integrated circuit are image-displayed as a distribution on a semiconductor substrate without actually fabricating the semiconductor integrated circuit. To simulate the fluctuation in device characteristic values of a plurality of semiconductor integrated circuits formed on a semiconductor substrate by applying various types of processing to the semiconductor substrate, the present invention generates simulation data for executing simulations in accordance with measured data for a plurality of predetermined portions on the semiconductor substrate after processed, calculates device characteristic values of the semiconductor integrated circuits in accordance with the simulation data, and displays the fluctuation of device characteristic values as a distribution on the semiconductor substrate.
申请公布号 US6321183(B1) 申请公布日期 2001.11.20
申请号 US19980103709 申请日期 1998.06.24
申请人 SONY CORPORATION 发明人 TATSUMI TAKAAKI
分类号 H01L29/00;H01L21/00;H01L21/66;(IPC1-7):G06F17/50 主分类号 H01L29/00
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