发明名称 |
Process for forming a borderless via in a semiconductor device |
摘要 |
A method is used to form a borderless via in a semiconductor device. A conductive layer, a borophosphosilicate glass (BPSG) layer and a patterned first mask layer are formed on a dielectric layer in sequence. The BPSG layer is patterned into a BPSG plug while using the patterned first mask layer as a mask. A second mask layer is formed to cover the patterned first mask layer and the metal layer. The conductive layer is defined to form a conductive line beneath the BPSG plug and the second mask layer. The first and second photoresist mask layers are removed. An inter-metal dielectric layer is formed around the BPSG plug and the conductive line. A via is formed in the inter-metal dielectric layer by removing the BPSG plug. A barrier layer and a metal layer fill the via to form a metal plug.
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申请公布号 |
US6319823(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US20000482421 |
申请日期 |
2000.01.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CORP. |
发明人 |
LIU CHIA-CHEN;WU JYH-REN |
分类号 |
H01L21/60;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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