Metallization process of semiconductor device

摘要

A metallization process of a semiconductor device is disclosed. The metallization process of a semiconductor device comprising the steps of: providing a semiconductor substrate having a junction region; forming an insulating layer on the upper of the semiconductor substrate; forming a contact hole by patterning the insulating layer so as to expose one portion of the junction region; forming a glue layer on the upper of the insulating layer, and at the bottom and inner surfaces of the contact hole; forming a barrier metal layer on the glue layer; forming an Mg layer as a solid solution layer on the barrier metal layer; forming a metal layer on the Mg layer; and forming a metal wiring layer having more liquidity than that of the metal layer, by melting the Mg layer to the metal.