发明名称 Dual FET differential voltage controlled attenuator
摘要 A dual FET differential voltage controlled attenuator includes a first voltage controlled FET transistor (M1), corresponding to a first control voltage terminal, and a second voltage controlled FET transistor (M2), corresponding to a second control voltage terminal. The first voltage controlled FET transistor attenuates a voltage at an attenuator output by regulating current through a first resistor (R2) connected between an attenuator output and a voltage supply node (Vcc), and the second voltage controlled FET transistor attenuates the voltage at the attenuator output by regulating current through a second resistor (R3) connected between the attenuator output and the voltage supply node. The first and second voltage controlled FET transistors attenuate the voltage at the attenuator output by generating differential currents in the first and second resistors, the differential currents giving a linear transfer function from an attenuator input to the attenuator output of the dual FET differential voltage controlled attenuator.
申请公布号 US6320425(B1) 申请公布日期 2001.11.20
申请号 US20000614324 申请日期 2000.07.12
申请人 MOTOROLA, INC. 发明人 BALASUBRAMANIYAN ARUL
分类号 H03G1/00;H03H11/24;(IPC1-7):H03K5/22 主分类号 H03G1/00
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