发明名称 |
Trench semiconductor device manufacture with a thicker upper insulating layer |
摘要 |
In the manufacture of semiconductor devices that have an electrode (11,41) in an insulated trench (20), for example a trench-gate MOSFET, process steps are performed to line the trench walls with a lower insulating layer (21) in a lower part of the trench and with a thicker upper insulating layer (22) in an upper part of the trench. The steps include: (a) etching the trench (20); (b) providing the lower insulating layer (21) on the trench walls; (c) depositing on the lower insulating layer (21) a further layer (51) of a different material; (d) depositing on the further layer (51) a filler material (52) that is of a different material from the further layer (51); (e) etching away the further layer (51) from the upper part of the trench walls while using the filler material (52) as an etchant mask, so as to form a space (50) adjacent to the upper part of the trench walls while leaving the further layer (51) in the lower part of the trench; and (f) providing the thicker upper insulating layer (22) in the space (50) adjacent to the upper part of the trench walls.
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申请公布号 |
US6319777(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US20010840816 |
申请日期 |
2001.04.24 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HUETING RAYMOND J. E.;TIMMERING CORNELIS E.;MAAS HENRICUS G. R. |
分类号 |
H01L21/331;H01L21/336;H01L21/8247;H01L27/115;H01L29/06;H01L29/41;H01L29/417;H01L29/423;H01L29/732;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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