发明名称 METHOD FOR PROVIDING DUAL WORKFUNCTION DOPING AND PROTECTIVE INSULATING CAP
摘要 A method for providing dual work function doping and borderless array diffusion contacts includes providing a semiconductor substrate, a gate insulator, a conductor on the gate insulator, an insulating cap on the conductor and insulating spacers on sidewalls of a portion of the conductor and the insulating cap. The method also includes doping portions of the semiconductor substrate and the conductor with a first conductive type and other portions with a second conductive type. The conductor may be annealed such that dopants of the first and second conductive types spread over the respective conductors.
申请公布号 SG84601(A1) 申请公布日期 2001.11.20
申请号 SG20000002902 申请日期 2000.05.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 JACK ALLAN MANDELMAN;GARY BELA BRONNER;RAMACHANDRA DIVAKARUNI
分类号 H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/088;H01L27/092;H01L27/10;H01L27/108;H01L29/78;(IPC1-7):H01L21/22 主分类号 H01L21/28
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