发明名称 |
Method of improving deposition |
摘要 |
A method for improving the quality of a deposited layer over a silicon substrate in a selective deposition where the silicon substrate has a native oxide layer thereon. A plasma reaction using a halogen compound as a reactive agent is performed so that the native oxide layer is transformed into a silicon halide layer and then removed at low pressure. A layer of the desired material is formed over the native oxide free silicon substrate surface by selective deposition.
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申请公布号 |
US6319861(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US20000562529 |
申请日期 |
2000.05.02 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SHIH HSUEH-HAO;CHENG ALAN;WU JUAN-YUAN |
分类号 |
H01L21/306;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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