发明名称 Method of improving deposition
摘要 A method for improving the quality of a deposited layer over a silicon substrate in a selective deposition where the silicon substrate has a native oxide layer thereon. A plasma reaction using a halogen compound as a reactive agent is performed so that the native oxide layer is transformed into a silicon halide layer and then removed at low pressure. A layer of the desired material is formed over the native oxide free silicon substrate surface by selective deposition.
申请公布号 US6319861(B1) 申请公布日期 2001.11.20
申请号 US20000562529 申请日期 2000.05.02
申请人 UNITED MICROELECTRONICS CORP. 发明人 SHIH HSUEH-HAO;CHENG ALAN;WU JUAN-YUAN
分类号 H01L21/306;(IPC1-7):H01L21/31 主分类号 H01L21/306
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