| 摘要 |
A dynamic random access memory device (100) includes storage capacitors using a high dielectric constant material, such as, BaSrTiO3, SrBi2Ta2O9 and PbZrTiO3, for the capacitors' insulator. The device includes a conductive plug (106) formed over and connecting with a semiconductor substrate (102). A buffer layer (107) of titanium silicide lays over the plug, and this layer serves to trap "dangling" bonds and to passivate the underlying surface. A first diffusion barrier layer (108), e.g., titanium aluminum nitride, covers the titanium silicide. A capacitor first electrode (110) lays over the diffusion barrier layer. The high dielectric constant material (112) is laid over the capacitor first electrode. A capacitor second electrode (116) is laid over the high dielectric constant material. A second diffusion barrier layer (120) is deposited on the capacitor second electrode. A conductor, such as aluminum (130), is laid over the second diffusion barrier layer. An isolation dielectric (132) can be deposited over the conductor at a high temperature without causing oxygen or metallic diffusion through the first and second diffusion barrier layers.
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