Memory cell for EEPROM devices and corresponding fabricating process

摘要

A memory cell of the EEPROM type formed on a semiconductor material substrate having a first conductivity type includes a drain region having a second conductivity type and extending at one side of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region. The region of electric continuity is produced by implantation at a predetermined angle of inclination.