发明名称 Power semiconductor module
摘要 A power semiconductor module in which at least one semiconductor chip with which contact is made by pressure is electrically connected via a contact element to a main connection. The contact element has two planar contact surfaces, between which a spring element is located. Irrespective of the individual position and height of a chip, the respective spring element ensures a standard contact force. Overloading of the semiconductor chips when the module is being clamped in is prevented by ceramic supporting elements.
申请公布号 US6320268(B1) 申请公布日期 2001.11.20
申请号 US20000488835 申请日期 2000.01.21
申请人 ABB (SCHWEIZ) AG 发明人 LANG THOMAS;BUCHER BENNO;FREY TONI
分类号 H01L25/07;H01L21/52;H01L23/48;H01L25/04;H01L25/18;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L25/07
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