| 摘要 |
Boost circuit units are connected in parallel. A boost output voltage VBOOST' of a dummy boost circuit unit having the same configuration as the boost circuit units is detected by a voltage detection circuit. The voltage detection circuit outputs a signal TBST2 which becomes "high" when VBOOST' is lower than VLIMIT and "low" when VBOOST' is equal to or higher than VLIMIT. The TBST2 signal is input to a NAND circuit. When a "high" signal is input to the NAND circuit, an input voltage ATDBST2 is input to the boost circuit unit as well via the NAND circuit and the two boost circuit units perform boost operation. Thus, a boost circuit can suppress the dispersion of the boost voltage caused by the dispersion of the process condition and the variation of the external temperature besides the variation of the power supply voltage Vcc.
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