| 摘要 |
A method for fabricating a capacitor in a DRAM cell, includes the steps of: forming a plurality of wordlines each having a first cap insulating film on a semiconductor substrate; forming source/drain impurity regions in an active region of the semiconductor substrate on both sides of each of the wordlines; forming first sidewall insulating films at the both sides of said each of the wordlines; forming first plugs for contacting either capacitor nodes or bitlines on each of the source/drain impurity regions; forming an interlayer insulating film on the semiconductor substrate and forming a contact hole to the first plugs for contacting to the bitlines therein; forming a plurality of bitlines in a direction perpendicular to the wordlines, each of the bitlines being in contact with the first plugs, and having a second cap insulating film; forming second sidewall insulating films at both sides of each of the bitlines and selectively removing the interlayer insulating film to expose surfaces of the first plugs; forming second plugs on the first plugs for contacting the capacitor nodes; removing the second cap insulating film to a required depth; forming capacitor storage electrodes on the second plugs and the second sidewall insulating films, wherein the capacitor storage electrodes are formed by sputtering a conductive layer on an entire surface of the semiconductor substrate and subjecting the conductive layer to an anisotropic etching to remove the conductive layer on the second cap insulating films; and forming a dielectric film and a plate electrode on the semiconductor substrate.
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