发明名称 |
Semiconductor device |
摘要 |
In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage is applied to the second high-concentration layer. A conductive layer provides an electrical connection between the first high-concentration layer and an input pad for inputting an input signal to an input circuit or input/output circuit. A first low-concentration layer of the second conductivity type is formed in the region of the semiconductor substrate immediately underlying the first high-concentration layer.
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申请公布号 |
US6320229(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US19990301354 |
申请日期 |
1999.04.29 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
UCHIKOBA TOSHITAKA;SAKAGAMI MASAHIKO;YAMAMOTO AKIHIRO |
分类号 |
H01L27/04;H01L21/822;H01L23/62;H01L27/02;(IPC1-7):H01L29/74;H01L31/113 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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