发明名称 Semiconductor device
摘要 In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage is applied to the second high-concentration layer. A conductive layer provides an electrical connection between the first high-concentration layer and an input pad for inputting an input signal to an input circuit or input/output circuit. A first low-concentration layer of the second conductivity type is formed in the region of the semiconductor substrate immediately underlying the first high-concentration layer.
申请公布号 US6320229(B1) 申请公布日期 2001.11.20
申请号 US19990301354 申请日期 1999.04.29
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 UCHIKOBA TOSHITAKA;SAKAGAMI MASAHIKO;YAMAMOTO AKIHIRO
分类号 H01L27/04;H01L21/822;H01L23/62;H01L27/02;(IPC1-7):H01L29/74;H01L31/113 主分类号 H01L27/04
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