Chemically preventing copper dendrite formation and growth by spraying

摘要

The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by spraying the wafer with a chemical agent. Embodiments include removing up to 60Å of silicon oxide by spraying the wafer with an acidic solution, such as a solution comprising acetic acid and ammonium fluoride.