发明名称 |
Method of forming viahole |
摘要 |
A method of forming a viahole in an interlayer insulating film without formation of irregularities on a side wall of the viahole. The method includes a first step of forming a viahole in an interlayer insulating film having a multi-layer structure of plural kinds of insulating layers; a second step of forming a side wall film on a side wall of the viahole; and a third step of removing a native oxide film formed on a bottom portion of the viahole by etching.
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申请公布号 |
US6319817(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US19990318254 |
申请日期 |
1999.05.25 |
申请人 |
SONY CORPORATION |
发明人 |
KOMATSU HIROSHI;HASHIMOTO MAKOTO;NAKAMURA MOTOAKI |
分类号 |
H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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