发明名称 Method of forming viahole
摘要 A method of forming a viahole in an interlayer insulating film without formation of irregularities on a side wall of the viahole. The method includes a first step of forming a viahole in an interlayer insulating film having a multi-layer structure of plural kinds of insulating layers; a second step of forming a side wall film on a side wall of the viahole; and a third step of removing a native oxide film formed on a bottom portion of the viahole by etching.
申请公布号 US6319817(B1) 申请公布日期 2001.11.20
申请号 US19990318254 申请日期 1999.05.25
申请人 SONY CORPORATION 发明人 KOMATSU HIROSHI;HASHIMOTO MAKOTO;NAKAMURA MOTOAKI
分类号 H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 主分类号 H01L21/28
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