发明名称 |
Barium doping of molten silicon for use in crystal growing process |
摘要 |
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5% gases insoluble in silicon. During melting and throughout the crystal growing process the barium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.
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申请公布号 |
US6319313(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US20000521288 |
申请日期 |
2000.03.08 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
PHILLIPS RICHARD JOSEPH;KELTNER STEVEN JACK;HOLDER JOHN DAVIS;DRAFALL LARRY E |
分类号 |
C30B29/06;C30B15/00;C30B15/10;(IPC1-7):C30B15/04 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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