| 摘要 |
PURPOSE: An X-decoder circuit of a semiconductor memory device is provided to reduce an area of a Vpp generator and power consumption by forming a Vpp potential shifter. CONSTITUTION: A Vpp potential shift portion(401) is formed with the first and the second PMOS transistors(Q17,Q18) and the first and the second NMOS transistor(Q19,Q20). The first and the second PMOS transistors(Q17,Q18) are connected between Vpp potential and the first and the second nodes(N13,N14). The first and the second NMOS transistors(Q19,Q20) are connected between the first node(N13) and a ground voltage. An address decoding portion(305) is formed with the third NMOS transistor(Q21,Q22,Q23) connected between the second node(N14) and the ground voltage. A plurality of driver portions(301-304) are formed with the third to the fifth PMOS transistors(Q24-Q26). The third to the fifth PMOS transistors(Q24) are connected between a word line driving signal(PX<0>) and the third node(N17).
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