| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor optical device, by which formation of a p-type conductivity region by diffusion and formation of a reflection film for covering the p-type conductivity region surface can be performed in a reduced number of steps and process tolerance in formation of the reflection film can be improved. SOLUTION: A p-type conductivity region is formed, for example, by laminating a ZnO layer 107 to be used also as a diffusion source and an SiO2 film 108 to be used also as a Zn evaporation preventing film in an opening portion of an InP cap layer by a sputtering method. Then, a Zn diffusion region 111 is formed by thermal diffusion. Furthermore, the ZnO layer 107 and the SiO2 film 108 are adjusted in thickness in advance and used as a reflection film layer composed of two layers, which shows desired reflectance at a predetermined light wavelength.
|
