| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having a pin structure which is high in efficiency electrically and optically. SOLUTION: An Si doped n-type Al0.15Ga0.32In0.53As buffer layer 2 of 0.2μm and an Si doped n-type Al0.48In0.52As layer 3 of 1μm are grown on an n-type InP substrate 1. After a non-doped Al0.27-0.34Ga0.20-0.13In0.53As inclined layer of 50 nm is grown, a quantum well active layer 4 composed of an Al0.07 Ga0.25In0.68As layer of 8 nm and an Al0.27Ga0.20In0.53As layer of 10 nm 5, and a non-doped Al0.27-0.34Ga0.20-0.13In0.53As inclined layer of 50 nm, are grown. Successively, A carbon doped p-type AlAs0.56Sb0.44 layer 5 of 1μm and a carbon doped p-type GaAs0.51Sb0.49 layer 6 of 50 nm are grown.
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