| 摘要 |
PROBLEM TO BE SOLVED: To form an element wherein magnetic induction phase (PMR) effect or tunnel magneto resistance(TMR) effect are largely exhibited by precisely controlling thickness of a phase transformation layer or a cluster electrode and selecting materials properly. SOLUTION: An element constituted of the phase transformation layer (H component), a perpendicularly magnetized layer or a perpendicularly magnetized electrode and a strain-applied layer (J component) or an element constituted of a cluster layer (K component) is formed on an upper surface of an insulating substrate (B component) constituted of a nonmagnetic member by combining an MBE method, a lithography method, an intensive external magnetic field and heat treatment. As a result, a magneto resistance element or a spin- dependent tunnel magneto resistance element wherein magneto resistance(MR) is greatly reduced by applying a small external magnetic field is formed.
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