SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide technology for speeding up a semiconductor integrated circuit device, suppressing electro-migration and stress migration and prolonging life of wiring. SOLUTION: Barrier layers 26a and copper films 26b are sequentially formed on an oxide silicon film 23 including the inner part of a wiring groove in the oxide silicon film 23 and a silicon nitride film 22, which are formed on a semiconductor substrate 1. Then, wirings 26 are formed by removing the barrier layers 26a and the copper films 26b of the outer parts of the wiring groove. Then, tungsten is selectively grown or preferentially grown on the wirings 26. Consequently, tungsten films 26c are formed on the wirings 26.