MEMBER USED FOR MASK, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, ELECTRON BEAM LITHOGRAPHY SYSTEM, AND CHARGED PARTICLE BEAM PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a member such as a mask or the like capable of restraining charging by a charged particle beam. SOLUTION: A mask 30 has a base member 200 and a charging restraining layer 202. The base member 200 is formed of a material prohibiting an electron beam from passing therethrough. The charging restraining layer 202 is formed on the base member 200 and preferably is formed at least on the surface, on the side where the electrons hit, of the base member 200. The charging restraining layer 202 is conductive and, preferably, is epitaxially grown on the material forming the base member 200. For example, a material for forming the charging restraining layer 202 may be cobalt silicate (CoSi2).