发明名称 DIVIDING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method that can divide a semiconductor wafer where a metal film is formed on the surface of a street without generating burrs. SOLUTION: This method is used to divide the semiconductor wafer by the street where the metal film is formed while the semiconductor wafer has the plurality of chips that are formed on the surface for each chip. In this case, the method includes a process to form a scribe line along the street on the surface of the semiconductor wafer for generating a division-guide line, a process that puts a tape onto the surface of the semiconductor wafer where the division-guide line is generated, and a back surface cutting process that has a slight part that is not cut along the division-guide line on the back surface of the semiconductor wafer where the tape is put for generating a cutting groove.
申请公布号 JP2001319897(A) 申请公布日期 2001.11.16
申请号 JP20000139135 申请日期 2000.05.11
申请人 DISCO ABRASIVE SYST LTD 发明人 TATEIWA SATOSHI;TOIDA YOSHITAMA
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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