| 摘要 |
PROBLEM TO BE SOLVED: To provide a Hall element at a low cost wherein manufacturing processes can be shortened. SOLUTION: In this Hall element, a magnetism sensing part 2 composed of an N-type semiconductor is formed on a substrate 1, and an electrode 3 is formed on the magnetism sensing part 2. The magnetism sensing part 2 is constituted of two layers of an upper layer 4 and a lower layer. The upper layer 4 is formed thinner than a depletion layer formed on a surface of the N-type semiconductor, and has carrier concentration higher than that of the lower layer.
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