| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric storage device in which a writing voltage can be decreased. SOLUTION: A semiconductor region is demarcated on the surface of a substrate. A source region and a drain region are arranged on both sides of a channel region in the semiconductor region. The channel region is covered with a gate insulating film. A floating gate electrode is arranged on the gate insulating film. A ferroelectric film is arranged on the floating gate electrode, and in contact with a region except a region in the vicinity of outer periphery out of an upper surface of the floating gate electrode. A control gate electrode is arranged on the ferroelectric film.
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