发明名称 METHOD AND APPARATUS FOR FORMING FILM, SILICON-BASED FILM, ELECTROMOTIVE FORCE ELEMENT AND SOLAR BATTERY THEREWITH, AND SENSOR AND IMAGING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a film such as a silicon-based film which can form a film having a good quality and adhesiveness even in a high film-formation speed. SOLUTION: The method of forming a film on a substrate 204 by a plasma- CVD method with high frequency is characterized by forming a film by providing a resistance constituent 603 consisting of different material from the above substrate, on an electricity path between the substrate 204 and an earth.
申请公布号 JP2001316818(A) 申请公布日期 2001.11.16
申请号 JP20010042459 申请日期 2001.02.19
申请人 CANON INC 发明人 KONDO TAKAHARU;SANO MASAFUMI;MATSUDA KOICHI;TOKAWA MAKOTO
分类号 C23C16/24;C23C16/509;C23C16/54;C30B25/10;H01L21/205;H01L31/0376;H01L31/04;H01L31/18 主分类号 C23C16/24
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