MANUFACTURING METHOD FOR SET ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an SET element which can be mass-produced independent of kind of material and can be applied even to an LSI structure. SOLUTION: This manufacturing method comprises a stage where a source electrode 20 and a drain electrode 30 separated by a specified distance are formed on an insulating substrate 10, a stage where a metal layer 40 of several nm thickness is formed between them, and a stage where a specified voltage is applied to them so that moving of metal atom/ion of the metal layer 40 forms a quantum point between them.