| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating equipment and a plating method which can form a plating layer with a uniform thickness within a wafer face. SOLUTION: A center cathode 90 is arranged at a center of a wafer W to contact with the wafer, as a contact for applying a cathode voltage to the wafer W, in addition to cathode contacts 64 and so on arranged on an outer circumferential edge, and a cathode voltage is applied alternatingly between the cathode contacts 64 and so on and the center cathode 90. Since a higher part of cathode voltage against a single anode 44 arranged in a bottom of a plating bath 42 fluctuates between a vicinity of the cathode contacts 64 arranged on the outer circumferential edge and the center of the wafer, a direction of current is scattered, and a current density of the total bottom surface of the wafer W is made uniform, and consequently a plated layer with a uniform thickness all over the wafer is formed.
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