CRYSTALLINE SILICON THIN FILM SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a crystalline silicon thin film semiconductor device and its manufacturing method in which peeling from a substrate is less and a solar cell having a large area and a high quality can be obtained during crystallization by metal catalyst. SOLUTION: A metal applied layer 2 is formed between a substrate and a metallic catalyst layer 3. A crystal silicon layer 4a crystallized by thermal treatment is suppressed from peeling the substrate 1 and simultaneously has a structure having an aperture 5. An electrode resistance can significantly be reduced when a solar cell has a large area caused by forming the aperture 5 as a lead electrode of the transparent electrode.