| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which the memory cell of a hidden block can be accessed without inputting an address at the time of a hidden mode when a hidden block is accessed by protecting every small block without increasing the memory chip area. SOLUTION: The non-volatile semiconductor memory being electrically rewritable, is constituted so that the device has K pieces of non-volatile storage elements for storing the protection information, non-volatile storage elements for storing a protection state, a storage region divided logically into blocks of 2K or less, and information writing to the continuous blocks in the storage region logically divided is prevented based on the information stored in the non-volatile storage element and in K pieces of the non-volatile storage elements storing the protection state.</p> |
